|
KMM466S823DT2 Revision History Revision 0.0 (July 5, 1999) PC66 SODIMM • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMET
KMM466S823CT2 Revision History Revision 2 (August 1998) 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. Preliminary 144pin SDRAM SODIMM REV. 2 August 1998 KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM Preliminary 144pin SDRAM SODIMM 8Mx64 SDRAM SODIM
KMM466S1724T2 Revision History Revision .1 (April 1998) - Self refresh current (ICC6) is changed. Preliminary 144pin SDRAM SODIMM Revision .3 (September 1998) - Corrected the Part Number as KMM466S1724T2. REV. 3 Sept. '98 KMM466S1724T2 KMM466S1724T2 SDRAM SODIMM Preliminary
DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F404CS2-L consists of four CMOS 4Mx16bits DRAMs in
DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F404BS2-L consists of four CMOS 4Mx16bits DRAMs in
DRAM MODULE KMM466F203CS2-L KMM466F213CS2-L 2Mx64 SODIMM (2MX8 Base) Revision 2.0 November 1997 -1- Rev. 2.0 (Nov. 1997) DRAM MODULE Revision History Version 2.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM466F203CS2-L KMM466F213CS2-L www.DataSheet
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |