파트넘버.co.kr KM736V787 데이터시트 검색

KM736V787 전자부품 데이터시트



KM736V787 전자부품 회로 및
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KM736V787  

Samsung Semiconductor
Samsung Semiconductor

KM736V787

128Kx36 Synchronous SRAM

KM736V787 Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 val




관련 부품 KM736V7 상세설명

KM736V747  

  
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and



Samsung Semiconductor
Samsung Semiconductor

PDF



KM736V795  

  
128Kx36 Synchronous SRAM

KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modify Read timing & Pow



Samsung Semiconductor
Samsung Semiconductor

PDF



KM736V790  

  
128Kx36 Synchronous SRAM

KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 Change speed bin from 60/67/75/85 to 72/85/10. Change DC characteristics



Samsung Semiconductor
Samsung Semiconductor

PDF



KM736V749  

  
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2



Samsung Semiconductor
Samsung Semiconductor

PDF



KM736V799  

  
128Kx36 Synchronous SRAM

KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No 0.0 0.1 History Initial draft Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V(pulse width≤tCYC/2) Change VIH max fr



Samsung Semiconductor
Samsung Semiconductor

PDF



KM736V789  

  
128Kx36 Synchronous SRAM

KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 R



Samsung Semiconductor
Samsung Semiconductor

PDF




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