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Datasheet KM736V687 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KM736V687 | 64Kx36-Bit Synchronous Burst SRAM PRELIMINARY
KM736V687
Document Title
64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP
64Kx36 Synchronous SRAM
Revision History
Rev. No.
Rev. 0.0 Rev. 1.0
History
Initial draft Final spec release
Draft Date
Nov. 02. 1996 May. 27. 1997
Remark
Preliminary Final
The attached da |
 Samsung Semiconductor |
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| 1 | KM736V687A | 64Kx36-Bit Synchronous Burst SRAM KM736V687A
Document Title
64Kx36-Bit Synchronous Burst SRAM
64Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ICC value from 320mA to 250mA at -7. ICC value from 300mA to 230mA at -8. ICC value from 280mA to 200mA at -9. ISB value from 90mA |
Samsung Semiconductor |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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