KM416S8030
Samsung semiconductor
2M x 16Bit x 4 Banks Synchronous DRAMKM416S8030
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & f
KM416S8030B
Samsung semiconductor
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTLKM416S8030B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Jun. 1999
KM416S8030B
Revision History
Revision
KM416S8030BN
Samsung semiconductor
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTLshrink-TSOP KM416S8030BN
Preliminary CMOS SDRAM
128Mb SDRAM
Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev.