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KM416S8030  

Samsung semiconductor
Samsung semiconductor

KM416S8030

2M x 16Bit x 4 Banks Synchronous DRAM

KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & f



KM416S8030B  

Samsung semiconductor
Samsung semiconductor

KM416S8030B

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B Revision History Revision



KM416S8030BN  

Samsung semiconductor
Samsung semiconductor

KM416S8030BN

128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev.



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