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Datasheet KM416S4030C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | KM416S4030C | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2 N value (10mA) is changed to 12mA.
Preliminary CMOS SDRAM
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
REV. 2 June '98
KM416S4030C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.3V power supply |
 Samsung semiconductor |
 |
| 6 | KM416S4030CT-F10 | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2 N value (10mA) is changed to 12mA.
Preliminary CMOS SDRAM
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
REV. 2 June '98
KM416S4030C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.3V power supply |
Samsung semiconductor |
|
| 5 | KM416S4030CT-F7 | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2 N value (10mA) is changed to 12mA.
Preliminary CMOS SDRAM
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
REV. 2 June '98
KM416S4030C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.3V power supply |
Samsung semiconductor |
|
| 4 | KM416S4030CT-F8 | 1M x 16Bit x 4 Banks Synchronous DRAM KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2 N value (10mA) is changed to 12mA.
Preliminary CMOS SDRAM
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
REV. 2 June '98
KM416S4030C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.3V power supply |
Samsung semiconductor |
|
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