KM416C4104C
Samsung semiconductor
4M x 16bit CMOS Dynamic RAM with Extended Data OutKM416C4004C, KM416C4104C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same
KM416C4100B
4M x 16bit CMOS Dynamic RAM with Fast Page ModeKM416C4000B, KM416C4100B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45,
Samsung semiconductor
PDF
KM416C4100C
4M x 16bit CMOS Dynamic RAM with Fast Page ModeKM416C4000C, KM416C4100C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 o
Samsung semiconductor
PDF