KM416C4000B
Samsung semiconductor
4M x 16bit CMOS Dynamic RAM with Fast Page ModeKM416C4000B, KM416C4100B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle
KM416C4000C
4M x 16bit CMOS Dynamic RAM with Fast Page ModeKM416C4000C, KM416C4100C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 o
Samsung semiconductor
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KM416C4004C
4M x 16bit CMOS Dynamic RAM with Extended Data OutKM416C4004C, KM416C4104C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.),
Samsung semiconductor
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