KM416C1204C
Samsung semiconductor
1M x 16Bit CMOS Dynamic RAM with Extended Data OutKM416C1004C, KM416C1204C KM416V1004C, KM416V1204C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory c
KM416C1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page ModeKM416C1000B, KM416C1200B KM416V1000B, KM416V1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
CMOS DRAM
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V
Samsung semiconductor
PDF
KM416C1200C
1M x 16Bit CMOS Dynamic RAM with Fast Page ModeKM416C1000C, KM416C1200C KM416V1000C, KM416V1200C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V
Samsung semiconductor
PDF
KM416C1200AT-6T
C-MOS 1M 16-BIT DYNAMIC RAMwww.partnumber.co.kr
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KM416C1200AT-6T (1/2) IL08
C-MOS 1M 16-BIT DYNAMIC RAM WITH FAST PAGE MODE
2 3 4 5 7 8 9 10 35 36 37 38 40 41 42 43
DQ1 I/O
1 VDD(+5V) 2
GND 44 43 DQ16 I/O 42 DQ15 I/O 41 DQ14 I/O 40 DQ13 I/O GND 39 38 DQ12 I/O 37 DQ11 I/O 36 DQ10 I/O 35 DQ9 I/O NC 34
ETC
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