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KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hype
KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply
KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V
www.fairchildsemi.com KM4170, KM4270, KM4470 Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers Features at 2.7V • • • • • • • • 136µA supply current per amplifier 4.9MHz bandwidth Output swings to within 20mV of either rail Input voltage range exceeds the rail by >250mV 5.3V/µs s
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V
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