KDV350E
KEC
SILICON EPITAXIAL PLANAR DIODESEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package. (ESC Package)
KDV350E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CE 1
CATHODE MARK B A
GG
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Revers
KDV350F
KEC
SILICON EPITAXIAL PLANAR DIODESEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resistance. : rS=0.5 (max.) Good C-V linearity.
KDV350F
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK 21
CE DF
MAXIMU