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SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Low Series Resistance Excellent Linearity (CV Curve) KDV275E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C1V/C4V =3.4(Min.) C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =3.4(Min.) Low Series Resistance Excellent Linearity (CV Curve) KDV275 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G K E A H 2 D J C I MAXIMUM RATING (Ta=25 CHARACTE
SEMICONDUCTOR TECHNICAL DATA KDV273UL VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) TENTATIVE C MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) KDV273E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR
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