KDR411
KEC
SCHOTTKY BARRIER TYPE DIODESEMICONDUCTOR
TECHNICAL DATA
KDR411
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FEATURES Small Surface Mounting Type. (USM) Low Forward Voltage : VF max=0.5V High Reliability
CONSTRUCTION Silicon epitaxial planar.
MAXIMUM
KDR411
KEC(Korea Electronics)
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION/ FOR SWITCHING POWER SUPPLY)SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. FEATURES
Small Surface Mounting Type. (USM)
A
E M B
KDR411
SCHOTTKY BARRIER TYPE DIODE
M D 3
Low Forward Voltage : VF max=0.5V High Reliability
2
1
CONSTRUCTION
Silicon epit
KDR411S
KEC
SCHOTTKY BARRIER TYPE DIODESEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FEATURES Small Surface Mounting Type. (SOT-23) Low Forward Voltage : VF max=0.5V High Reliability
CONSTRUCTION Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Pe
KDR411S
KEC(Korea Electronics)
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION/ FOR SWITCHING POWER SUPPLY)SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. FEATURES
Small Surface Mounting Type. (SOT-23) Low Forward Voltage : VF max=0.5V
A G
L
KDR411S
SCHOTTKY BARRIER TYPE DIODE
E B
L
DIM A
2
MILLIMETERS _ 0.20 2.93 +
1.30+0.20/-