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K9K1G08U0B  

Samsung semiconductor
Samsung semiconductor

K9K1G08U0B

128M x 8 Bit NAND Flash Memory

K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is




관련 부품 K9K1G08U 상세설명

K9K1G08U0A1  

  
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns o



Samsung semiconductor
Samsung semiconductor

PDF



K9K1G08U0M-YIB0  

  
128M x 8 Bit NAND Flash Memory



Samsung semiconductor
Samsung semiconductor

PDF



K9K1G08U0A  

  
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns o



Samsung semiconductor
Samsung semiconductor

PDF



K9K1G08U0A  

  
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory



Samsung semiconductor
Samsung semiconductor

PDF



K9K1G08U0M-YIB0  

  
128M x 8 Bit NAND Flash Memory

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is required before internal



Samsung semiconductor
Samsung semiconductor

PDF



K9K1G08U0M-YCB0  

  
128M x 8 Bit NAND Flash Memory

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is required before internal



Samsung semiconductor
Samsung semiconductor

PDF




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