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Datasheet K9K1208U0M Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | K9K1208U0M | 64M x 8 Bit NAND Flash Memory K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr |
Samsung semiconductor |
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2 | K9K1208U0M-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0M-YCB0, K9K1208U0M-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycl |
Samsung semiconductor |
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1 | K9K1208U0M-YIB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0M-YCB0, K9K1208U0M-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycl |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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