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K9F6408Q0C-B  

Samsung semiconductor
Samsung semiconductor

K9F6408Q0C-B

8M x 8 Bit Bit NAND Flash Memory

K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. Package part number is modi




관련 부품 K9F6408Q0C 상세설명

K9F6408Q0C-H  

  
8M x 8 Bit Bit NAND Flash Memory

K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. Package part number is modified. K9F6408U0C-Y ---> K9F6408U0C_T 3.



Samsung semiconductor
Samsung semiconductor

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K9F6408Q0C  

  
8M x 8 Bit Bit NAND Flash Memory

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Pro



Samsung semiconductor
Samsung semiconductor

PDF




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