K9F2G08U0M
Samsung semiconductor
FLASH MEMORYK9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M
Preliminary FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Pag
K9F2G08U0A
(K9F2G08UxA) Flash MemoryK9F2G08R0A K9F2G08U0A
FLASH MEMORY
K9F2G08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
Samsung Electronics
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K9F2G08U0B
FLASH MEMORYK9F2G08B0B K9F2G08U0B
Preliminary FLASH MEMORY
K9F2G08X0B
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY IN
Samsung Electronics
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K9F2G08U0C
2Gb C-die NAND FlashRev. 0.2, May. 2010 K9F2G08U0C
Advance
2Gb C-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All informa
Samsung
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