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K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID
Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur
K8F56(57)15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY
K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 1.1 Initial Draft Final Specification Revised - Release the stand-by current from typ. 5uA(max. 18uA) to typ. 10uA(max. 30uA). No
K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 1.1 Initial Draft Final Specification Revised - Release the stand-by current from typ. 5uA(max. 18uA) to typ. 10uA(max. 30uA). No
K8S6415ET(B)B FLASH MEMORY Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 Initial Issue Draft Date October 20, 2004 Remark Revision March 22, 2005 - Specification finalized - Add the requirement and note of Quadruple word
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