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Datasheet K7R323682M Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K7R323682M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM K7R323682M K7R321882M K7R320982M Document Title
1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM
1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Updat | Samsung semiconductor | ram |
K7R Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K7R161884B | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | | |
2 | K7R161884B-FC16 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | | |
3 | K7R161884B-FC20 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | | |
4 | K7R161884B-FC25 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | | |
5 | K7R161884B-FC30 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | | |
6 | K7R163684B | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | | |
7 | K7R163684B-FC16 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram Samsung semiconductor ram | |
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Número de pieza | Descripción | Fabricantes | |
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