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Datasheet K7D803671B-HC30 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K7D803671B-HC30 | 256Kx36 & 512Kx18 SRAM K7D803671B K7D801871B
Document Title
8M DDR SYNCHRONOUS SRAM
256Kx36 & 512Kx18 SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History -Initial document. -ZQ tolerance changed from 10% to 15% -Stop Clock Standby Current condition changed from VIN=VDD-0.2V or 0.2V fixed to V IN =VIH or V I |
Samsung semiconductor |
K7D803671B-H Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K7D803671B-HC30 | 256Kx36 & 512Kx18 SRAM |
Samsung semiconductor |
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K7D803671B-HC37 | 256Kx36 & 512Kx18 SRAM |
Samsung semiconductor |
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K7D803671B-HC35 | 256Kx36 & 512Kx18 SRAM |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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