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K7B403625M  

Samsung semiconductor
Samsung semiconductor

K7B403625M

128Kx36-Bit Synchronous Burst SRAM

K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 29




관련 부품 K7B40362 상세설명

K7B403625B-QC  

  
128Kx36/x32 & 256Kx18 Synchronous SRAM

K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15,



Samsung semiconductor
Samsung semiconductor

PDF



K7B403625B  

  
128Kx36/x32 & 256Kx18 Synchronous SRAM

K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15,



Samsung semiconductor
Samsung semiconductor

PDF




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