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K7N803601B K7N801801B Document Title 256Kx36 & 512Kx18 Pipelined NtRAMTM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final
K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SH
K7Q163652A K7Q161852A Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write
K7M323625M K7M321825M Document Title 1Mx36 & 2Mx18 Flow-Through NtRAMTM 1Mx36 & 2Mx18-Bit Flow Through N tRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2
K78XX-500R2 Series WIDE INPUT NON-ISOLATED & REGULATED SINGLE OUTPUT FEATURES l Efficiency up to 96% l Operating temperature range: -40°C ~ +85°C l Low ripple and noise l Supporting negative output perfectly l Short circuit protection, thermal shutdown l Sip package, meet UL94-V0 l Pin-out compat
K7I323682M K7I321882M Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM 1Mx36 & 2Mx18 DDRII CIO b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved p
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