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K6T4016U3C-TB10  

Samsung semiconductor
Samsung semiconductor

K6T4016U3C-TB10

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/8




관련 부품 K6T4016U3C-TB 상세설명

K6T4016U3C-TB85  

  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC:



Samsung semiconductor
Samsung semiconductor

PDF



K6T4016U3C-TB70  

  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC:



Samsung semiconductor
Samsung semiconductor

PDF




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