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K6T4008C1B-VB70  

Samsung semiconductor
Samsung semiconductor

K6T4008C1B-VB70

512Kx8 bit Low Power CMOS Static RAM

K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA →




관련 부품 K6T4008C1B-VB 상세설명

K6T4008C1B-VB55  

  
512Kx8 bit Low Power CMOS Static RAM

K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur



Samsung semiconductor
Samsung semiconductor

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