K6T4008C1B-VB70
Samsung semiconductor
512Kx8 bit Low Power CMOS Static RAMK6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA →
K6T4008C1B-VB55
512Kx8 bit Low Power CMOS Static RAMK6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur
Samsung semiconductor
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