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K699 전자부품 데이터시트



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K699  

NEC
NEC

K699

MOSFET ( Transistor ) - 2SK699





관련 부품 K6 상세설명

K6T4008C1C-VF70  

  
512Kx8 bit Low Power CMOS Static RAM

K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize Draft Date October 20,1998 April 12, 1999 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electroni



Samsung semiconductor
Samsung semiconductor

PDF



K6R1008C1A-I20  

  
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data S



Samsung semiconductor
Samsung semiconductor

PDF



K6T0808C1D-RB70  

  
32Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622



Samsung semiconductor
Samsung semiconductor

PDF



K6T4008U1C-VB85  

  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at r



Samsung semiconductor
Samsung semiconductor

PDF



K6T4008V1C-YF85  

  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at r



Samsung semiconductor
Samsung semiconductor

PDF



K6X4008T1F-YB70  

  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Added 55ns product( Vcc = 3.0V~3.6V) Revised - Added Commercial product Revised - Errata correction : corrected commercial product f



Samsung semiconductor
Samsung semiconductor

PDF




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