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K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize Draft Date October 20,1998 April 12, 1999 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electroni
K6X1008T2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft Draft Data July 15, 2002 Remark Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product. - Added 55ns p
PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data S
K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at r
K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Added 55ns product( Vcc = 3.0V~3.6V) Revised - Added Commercial product Revised - Errata correction : corrected commercial product f
K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at r
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