파트넘버.co.kr K664 데이터시트 검색

K664 전자부품 데이터시트



K664 전자부품 회로 및
기능 검색 결과



K664  

Panasonic Semiconductor
Panasonic Semiconductor

K664

MOSFET ( Transistor ) - 2SK664

Silicon MOS FETs (Small Signal) 2SK664 Silicon N-Channel MOS FET For switching s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. 2.0±0.2 1.3±0.1 0.65 0.65 u




관련 부품 K6 상세설명

K6T4008C1C-VF70  

  
512Kx8 bit Low Power CMOS Static RAM

K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize Draft Date October 20,1998 April 12, 1999 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electroni



Samsung semiconductor
Samsung semiconductor

PDF



K6X1008T2D-GF85  

  
128Kx8 bit Low Power CMOS Static RAM

K6X1008T2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft Draft Data July 15, 2002 Remark Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product. - Added 55ns p



Samsung semiconductor
Samsung semiconductor

PDF



K6R1008C1A-I20  

  
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data S



Samsung semiconductor
Samsung semiconductor

PDF



K6T4008U1C-GB85  

  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at r



Samsung semiconductor
Samsung semiconductor

PDF



K6X4008T1F-Q  

  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Added 55ns product( Vcc = 3.0V~3.6V) Revised - Added Commercial product Revised - Errata correction : corrected commercial product f



Samsung semiconductor
Samsung semiconductor

PDF



K6T4008V1C-GB85  

  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at r



Samsung semiconductor
Samsung semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처