K4X56163PI-FG
Samsung semiconductor
16Mx16 Mobile DDR SDRAMK4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS
K4X56163PI-LG
16Mx16 Mobile DDR SDRAMK4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
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K4X56163PI-FE
16Mx16 Mobile DDR SDRAMK4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
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K4X56163PI-LE
16Mx16 Mobile DDR SDRAMK4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
PDF