파트넘버.co.kr K4X56163PI-FG 데이터시트 검색

K4X56163PI-FG 전자부품 데이터시트



K4X56163PI-FG 전자부품 회로 및
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K4X56163PI-FG  

Samsung semiconductor
Samsung semiconductor

K4X56163PI-FG

16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS




관련 부품 K4X56163PI- 상세설명

K4X56163PI-LG  

  
16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L



Samsung semiconductor
Samsung semiconductor

PDF



K4X56163PI-FE  

  
16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L



Samsung semiconductor
Samsung semiconductor

PDF



K4X56163PI-LE  

  
16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L



Samsung semiconductor
Samsung semiconductor

PDF




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