|
|
K4X56163PE-LG 전자부품 데이터시트
|
|
K4X56163PE-LG 전자부품 회로 및
기능 검색 결과
K4X56163PE-LG
Samsung semiconductor
16M x16 Mobile DDR SDRAM
K4X56163PE-L(F)G
16M x16 Mobile DDR SDRAM
FEATURES
Mobile-DDR SDRAM
• 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock
관련 부품 K4X56163PE- 상세설명
K4X56163PE-LFG
16M x16 Mobile DDR SDRAM
Samsung semiconductor
PDF
16M x16 Mobile DDR SDRAM
K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad
Samsung semiconductor
|
|
| 사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |