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K4X51163PE-FG  

Samsung semiconductor
Samsung semiconductor

K4X51163PE-FG

32Mx16 Mobile DDR SDRAM

K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS



K4X51163PE-FG  

Samsung semiconductor
Samsung semiconductor

K4X51163PE-FG

32Mx16 Mobile DDR SDRAM

K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS



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