K4X51163PE-FG
Samsung semiconductor
32Mx16 Mobile DDR SDRAMK4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS
K4X51163PE-FG
Samsung semiconductor
32Mx16 Mobile DDR SDRAMK4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS