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K4S64323LH-FG  

Samsung semiconductor
Samsung semiconductor

K4S64323LH-FG

512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst le




관련 부품 K4S64323LH- 상세설명

K4S64323LH-FN  

  
512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF



K4S64323LH-FHx  

  
512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF



K4S64323LH-FF  

  
512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF



K4S64323LH-FE  

  
512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF



K4S64323LH-FC  

  
512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF



K4S64323LH-FN60  

  
512K x 32Bit x 4 Banks Mobile SDRAM

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF




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