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K4S643233H-FE  

Samsung semiconductor
Samsung semiconductor

K4S643233H-FE

Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. B




관련 부품 K4S643233H- 상세설명

K4S643233H-FL  

  
Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -.



Samsung semiconductor
Samsung semiconductor

PDF



K4S643233H-FHN  

  
Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -.



Samsung semiconductor
Samsung semiconductor

PDF



K4S643233H-FHL  

  
Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -.



Samsung semiconductor
Samsung semiconductor

PDF



K4S643233H-FHG  

  
Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -.



Samsung semiconductor
Samsung semiconductor

PDF



K4S643233H-FHE  

  
Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -.



Samsung semiconductor
Samsung semiconductor

PDF



K4S643233H-FHC  

  
Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -.



Samsung semiconductor
Samsung semiconductor

PDF




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