K4S643232E-TI60
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E-TI/P
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature
Revision 1.2 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.2 (Oct. 2001)
K
K4S643232E-TI70
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E-TI/P
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature
Revision 1.2 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.2 (Oct. 2001)
K4S643232E-TI/P
Revision History
Revision
Samsung semiconductor
PDF
K4S643232E-TI
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E-TI/P
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature
Revision 1.2 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.2 (Oct. 2001)
K4S643232E-TI/P
Revision History
Revision
Samsung semiconductor
PDF