K4S643232E-TE50
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)K4S643232E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP
Revision 1.4 December 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (
K4S643232E-TE60
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)K4S643232E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP
Revision 1.4 December 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (Dec. 2001)
K4S643232E-TE/N
Revision His
Samsung semiconductor
PDF
K4S643232E-TE70
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)K4S643232E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP
Revision 1.4 December 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (Dec. 2001)
K4S643232E-TE/N
Revision His
Samsung semiconductor
PDF