K4S643232E-
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)K4S643232E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP
Revision 1.4 December 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (
K4S643232E-TC45
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
R
K4S643232E-TC50
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
R
K4S643232E-TC55
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
R
K4S643232E-TC60
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
R
K4S643232E-TC70
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLK4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
R
K4S643232E-TE50
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)K4S643232E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP
Revision 1.4 December 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (
K4S643232E-TE60
Samsung semiconductor
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)K4S643232E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP
Revision 1.4 December 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (