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K4S643232E-  

Samsung semiconductor
Samsung semiconductor

K4S643232E-

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (



K4S643232E-TC45  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TC45

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) K4S643232E Revision History R



K4S643232E-TC50  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TC50

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) K4S643232E Revision History R



K4S643232E-TC55  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TC55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) K4S643232E Revision History R



K4S643232E-TC60  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TC60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) K4S643232E Revision History R



K4S643232E-TC70  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TC70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) K4S643232E Revision History R



K4S643232E-TE50  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TE50

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (



K4S643232E-TE60  

Samsung semiconductor
Samsung semiconductor

K4S643232E-TE60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (



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