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K4S641633H-G 전자부품 데이터시트



K4S641633H-G 전자부품 회로 및
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K4S641633H-G  

Samsung semiconductor
Samsung semiconductor

K4S641633H-G

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur




관련 부품 K4S641633H 상세설명

K4S641633H-RE  

  
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S641633H-R  

  
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S641633H-N  

  
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S641633H-L  

  
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S641633H-F75  

  
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S641633H-F1L  

  
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF




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