K4S641633H-F1H
Samsung semiconductor
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAK4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur
K4S641633H-F75
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAK4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B
Samsung semiconductor
PDF
K4S641633H-F1L
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAK4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B
Samsung semiconductor
PDF