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Datasheet K4S56323LF-FHR Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4S56323LF-FHR | 2M x 32Bit x 4 Banks Mobile SDRAM K4S56323LF - F(H)E/N/S/C/L/R
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst |
Samsung semiconductor |
K4S56323LF- Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4S56323LF-FHC | 2M x 32Bit x 4 Banks Mobile SDRAM |
Samsung semiconductor |
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K4S56323LF-FS | 2M x 32Bit x 4 Banks Mobile SDRAM |
Samsung semiconductor |
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K4S56323LF-FR | 2M x 32Bit x 4 Banks Mobile SDRAM |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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