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Datasheet K4S56163PF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K4S56163PF | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
 Samsung semiconductor |
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| 3 | K4S56163PF-F1L | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
Samsung semiconductor |
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| 2 | K4S56163PF-F90 | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
Samsung semiconductor |
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| 1 | K4S56163PF-RG | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
Samsung semiconductor |
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