Datasheet K4S561633C-N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4S561633C-N	16Mx16 SDRAM 54CSP K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four	Samsung semiconductor

K4S561633 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4S561633F-X	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8	Samsung semiconductor
K4S561633F-E	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8	Samsung semiconductor
K4S561633F	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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