파트넘버.co.kr K4S561632H 데이터시트 검색

K4S561632H 전자부품 데이터시트



K4S561632H 전자부품 회로 및
기능 검색 결과



K4S561632H  

Samsung Electronics
Samsung Electronics

K4S561632H

256Mb H-Die SDRAM

SDRAM 256Mb H-die (x4, x8, x16) CMOS SDRAM 256Mb H-die SDRAM Specification DataShee partnumber.co.krom INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOC




관련 부품 K4S56163 상세설명

K4S561633F-C  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Bu



Samsung semiconductor
Samsung semiconductor

PDF



K4S561633C-RL  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

PDF



K4S561633C-RBL  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

PDF



K4S561633C-P75  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

PDF



K4S561633C-P1L  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

PDF



K4S56163PF-RG  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung semiconductor
Samsung semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처