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K4S561632D  

Samsung semiconductor
Samsung semiconductor

K4S561632D

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL partnumber.co.krom DataShee Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Au




관련 부품 K4S56163 상세설명

K4S561633C-P1L  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

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K4S56163PF-RG  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung semiconductor
Samsung semiconductor

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K4S561633C-P1H  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

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K4S56163PF-F90  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung semiconductor
Samsung semiconductor

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K4S561633C-N  

  
16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four



Samsung semiconductor
Samsung semiconductor

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K4S56163PF-F1L  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung semiconductor
Samsung semiconductor

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