Datasheet K4S51163PF-YF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4S51163PF-YF	8M x 16Bit x 4 Banks Mobile-SDRAM K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS	Samsung semiconductor

K4S51163PF Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4S51163PF-Y	8M x 16Bit x 4 Banks Mobile-SDRAM K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & I	Samsung semiconductor
K4S51163PF-YF	8M x 16Bit x 4 Banks Mobile-SDRAM K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & I	Samsung semiconductor
K4S51163PF-F90	8M x 16Bit x 4 Banks Mobile-SDRAM K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & I	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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