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Datasheet K4S51163PF-Y Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K4S51163PF-Y | 8M x 16Bit x 4 Banks Mobile-SDRAM K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS |
 Samsung semiconductor |
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| 1 | K4S51163PF-YF | 8M x 16Bit x 4 Banks Mobile-SDRAM K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS |
Samsung semiconductor |
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