Datasheet K4S51153LF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4S51153LF	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -	Samsung semiconductor

K4S5115 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4S511533F-YPC	8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu	Samsung semiconductor
K4S51153LF	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2,	Samsung semiconductor
K4S511533F-YPL	8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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