K4S510832M
Samsung semiconductor
16M x 8bit x 4 Banks Synchronous DRAM LVTTLK4S510832M
Preliminary CMOS SDRAM
512Mbit SDRAM
16M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.2 Dec. 2001
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.2 Dec. 2001
K4S51083
K4S510832B-TC75
512Mb B-die SDRAM SpecificationSDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.1 February 2004
SDRAM 512Mb B-die (x4, x8, x16)
Revision History
Revision 1.0 (January, 2004
Samsung semiconductor
PDF
K4S510832B-TCL75
512Mb B-die SDRAM SpecificationSDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.1 February 2004
SDRAM 512Mb B-die (x4, x8, x16)
Revision History
Revision 1.0 (January, 2004
Samsung semiconductor
PDF