K4S28323LF
Samsung semiconductor
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst leng
K4S28323LF-ER1H
Samsung semiconductor
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst leng
K4S28323LF-F
Samsung semiconductor
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst leng
K4S28323LF-FR60
Samsung semiconductor
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst leng
K4S28323LF-HER75
Samsung semiconductor
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst leng
K4S28323LF-NR1L
Samsung semiconductor
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst leng