파트넘버.co.kr K4S283233F-F1H 데이터시트 검색

K4S283233F-F1H 전자부품 데이터시트



K4S283233F-F1H 전자부품 회로 및
기능 검색 결과



K4S283233F-F1H  

Samsung semiconductor
Samsung semiconductor

K4S283233F-F1H

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur




관련 부품 K4S283233F-F 상세설명

K4S283233F-FHE  

  
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S283233F-FE  

  
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S283233F-F75  

  
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S283233F-F60  

  
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF



K4S283233F-F1L  

  
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B



Samsung semiconductor
Samsung semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처