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K4M56323PG-G 전자부품 데이터시트



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K4M56323PG-G  

Samsung semiconductor
Samsung semiconductor

K4M56323PG-G

2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1,




관련 부품 K4M56323PG 상세설명

K4M56323PG-F  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF



K4M56323PG-FE  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF



K4M56323PG-C  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF




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