K4M56323PG-C
Samsung semiconductor
2M x 32Bit x 4 Banks Mobile SDRAMK4M56323PG-F(H)E/G/C/F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1,
K4M56323PG-F
2M x 32Bit x 4 Banks Mobile SDRAMK4M56323PG-F(H)E/G/C/F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se
Samsung semiconductor
PDF
K4M56323PG-G
2M x 32Bit x 4 Banks Mobile SDRAMK4M56323PG-F(H)E/G/C/F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se
Samsung semiconductor
PDF
K4M56323PG-FE
2M x 32Bit x 4 Banks Mobile SDRAMK4M56323PG-F(H)E/G/C/F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se
Samsung semiconductor
PDF