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K4M563233D 전자부품 데이터시트



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K4M563233D  

Samsung
Samsung

K4M563233D

8Mx32 Mobile SDRAM 90FBGA

K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M563233D-M(E)E/N/I/P 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply • LVCMOS compat




관련 부품 K4M56323 상세설명

K4M56323PG-F  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF



K4M56323LE  

  
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M56323LE - M(E)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu



Samsung semiconductor
Samsung semiconductor

PDF



K4M56323PG-G  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF



K4M56323PG-FE  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF



K4M56323PG-C  

  
2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se



Samsung semiconductor
Samsung semiconductor

PDF



K4M563233G  

  
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M563233G - F(H)N/G/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 &



Samsung semiconductor
Samsung semiconductor

PDF




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