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K4M56163LG 전자부품 데이터시트



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K4M56163LG  

Samsung semiconductor
Samsung semiconductor

K4M56163LG

2M x 16Bit x 4 Banks Mobile SDRAM

K4M56163LG - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 &




관련 부품 K4M56163 상세설명

K4M56163PE-RG  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung
Samsung

PDF



K4M56163PE-R  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung
Samsung

PDF



K4M56163PE-F90  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung
Samsung

PDF



K4M56163PG  

  
4M x 16Bit x 4 Banks Mobile SDRAM

K4M56163PG - R(B)E/G/C/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full p



Samsung semiconductor
Samsung semiconductor

PDF



K4M56163PE-F1L  

  
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ



Samsung
Samsung

PDF



K4M561633G  

  
4M x 16Bit x 4 Banks Mobile SDRAM

K4M561633G - R(B)N/G/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung semiconductor
Samsung semiconductor

PDF




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